Source: stmicroelectronics

STMicroelectronics said that the two sides had signed an agreement to establish a new 8-inch silicon carbide device joint venture manufacturing plant in Chongqing, China, to better support China's growing demand for automotive electrification, industrial power and energy applications.


Meanwhile, Sanan Optoelectronics will utilize its own SiC substrate process to build and operate a new 8-inch SiC substrate manufacturing plant separately to meet the substrate needs of the joint venture. The joint venture will adopt ST's patented SiC manufacturing process technology, focus on producing SiC devices for ST, and serve as ST's dedicated wafer foundry to meet the needs of its Chinese customers.


STMicroelectronics expects that the plant will be put into production in the fourth quarter of 2025, and the silicon carbide revenue is expected to exceed US $5 billion by 2030.